Fundamentals and Recent Advances in Epitaxial Graphene on SiC

• Altri autori: Yakimova, Rositsa (Redattore), Shtepliuk, Ivan (Redattore)
• Natura: Elettronico Capitolo di libro
• Lingua: inglese
• Pubblicazione: Basel, Switzerland MDPI - Multidisciplinary Digital Publishing Institute 2021
• Soggetti: Technology: general issues; epitaxial graphene; copper; redox reaction; electrodeposition; voltammetry; chronoamperometry; DFT; silicon carbide; Raman spectroscopy; 2D peak line shape; G peak; charge density; strain; atomic layer deposition; high-k insulators; ion implantation; Raman; AFM; XPS; graphene; SiC; 3C-SiC on Si; substrate interaction; carrier concentration; mobility; intercalation; buffer layer; surface functionalization; twistronics; twisted bilayer graphene; flat band; epitaxial graphene on SiC; quasi-free-standing graphene; monolayer graphene; high-temperature sublimation; terahertz optical Hall effect; free charge carrier properties; sublimation; electronic properties; material engineering; deposition
• Accesso online: DOAB: download the publication; DOAB: description of the publication

Riassunto

This book is a compilation of recent studies by recognized experts in the field of epitaxial graphene working towards a deep comprehension of growth mechanisms, property engineering, and device processing. The results of investigations published within this book develop cumulative knowledge on matters related to device-quality epaxial graphene on SiC, bringing this material closer to realistic applications.

Descrizione fisica

1 electronic resource (94 p.)

ISBN

books978-3-0365-1178-8
9783036511795
9783036511788

Accesso

Open Access