Micro- and Nanotechnology of Wide Bandgap Semiconductors
Owing to their unique characteristics, direct wide bandgap energy, large breakdown field, and excellent electron transport properties, including operation at high temperature environments and low sensitivity to ionizing radiation, gallium nitride (GaN) and related group III-nitride heterostructures...
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Diğer Yazarlar: | , , |
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Materyal Türü: | Elektronik Kitap Bölümü |
Dil: | İngilizce |
Baskı/Yayın Bilgisi: |
Basel, Switzerland
MDPI - Multidisciplinary Digital Publishing Institute
2021
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Konular: | |
Online Erişim: | DOAB: download the publication DOAB: description of the publication |
Etiketler: |
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Internet
DOAB: download the publicationDOAB: description of the publication
3rd Floor Main Library
Yer Numarası: |
A1234.567 |
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Kopya Bilgisi 1 | Kütüphanede |