Micro- and Nanotechnology of Wide Bandgap Semiconductors
Owing to their unique characteristics, direct wide bandgap energy, large breakdown field, and excellent electron transport properties, including operation at high temperature environments and low sensitivity to ionizing radiation, gallium nitride (GaN) and related group III-nitride heterostructures...
Furkejuvvon:
Eará dahkkit: | , , |
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Materiálatiipa: | Elektrovnnalaš Girjji oassi |
Giella: | eaŋgalasgiella |
Almmustuhtton: |
Basel, Switzerland
MDPI - Multidisciplinary Digital Publishing Institute
2021
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Fáttát: | |
Liŋkkat: | DOAB: download the publication DOAB: description of the publication |
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Interneahtta
DOAB: download the publicationDOAB: description of the publication
3rd Floor Main Library
Hildobáiki: |
A1234.567 |
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Njađus 1 | Oažžumis |