Micro- and Nanotechnology of Wide Bandgap Semiconductors

Owing to their unique characteristics, direct wide bandgap energy, large breakdown field, and excellent electron transport properties, including operation at high temperature environments and low sensitivity to ionizing radiation, gallium nitride (GaN) and related group III-nitride heterostructures...

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Eará dahkkit: Piotrowska, Anna B. (Doaimmaheaddji), Kamińska, Eliana (Doaimmaheaddji), Wojtasiak, Wojciech (Doaimmaheaddji)
Materiálatiipa: Elektrovnnalaš Girjji oassi
Giella:eaŋgalasgiella
Almmustuhtton: Basel, Switzerland MDPI - Multidisciplinary Digital Publishing Institute 2021
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3rd Floor Main Library

oažžasuvvan: 3rd Floor Main Library
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