Micro- and Nanotechnology of Wide Bandgap Semiconductors
Owing to their unique characteristics, direct wide bandgap energy, large breakdown field, and excellent electron transport properties, including operation at high temperature environments and low sensitivity to ionizing radiation, gallium nitride (GaN) and related group III-nitride heterostructures...
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Formatua: | Baliabide elektronikoa Liburu kapitulua |
Hizkuntza: | ingelesa |
Argitaratua: |
Basel, Switzerland
MDPI - Multidisciplinary Digital Publishing Institute
2021
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Sarrera elektronikoa: | DOAB: download the publication DOAB: description of the publication |
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