Micro- and Nanotechnology of Wide Bandgap Semiconductors

• Outros Autores: Piotrowska, Anna B. (Editor), Kamińska, Eliana (Editor), Wojtasiak, Wojciech (Editor)
• Formato: Recurso Eletrônico Capítulo de Livro
• Idioma: inglês
• Publicado em: Basel, Switzerland MDPI - Multidisciplinary Digital Publishing Institute 2021
• Assuntos: Technology: general issues; GaN HEMT; self-heating effect; microwave power amplifier; thermal impedance; thermal time constant; thermal equivalent circuit; GaN; crystal growth; ammonothermal method; HVPE; ion implantation; gallium nitride; thermodynamics; ultra-high-pressure annealing; diffusion; diffusion coefficients; molecular beam epitaxy; nitrides; laser diode; tunnel junction; LTE; AlN; AlGaN/GaN; interface state density; conductance-frequency; MISHEMT; gallium nitride nanowires; polarity; Kelvin probe force microscopy; selective area growth; selective epitaxy; AlGaN/GaN heterostructures; edge effects; effective diffusion length; MOVPE; nanowires; AlGaN; LEDs; growth polarity; n/a
• Acesso em linha: DOAB: download the publication; DOAB: description of the publication

Owing to their unique characteristics, direct wide bandgap energy, large breakdown field, and excellent electron transport properties, including operation at high temperature environments and low sensitivity to ionizing radiation, gallium nitride (GaN) and related group III-nitride heterostructures...