Flash Memory Devices

• Kolejni autorzy: Zambelli, Cristian (Redaktor), Micheloni, Rino (Redaktor)
• Format: Elektroniczne Rozdział
• Język: angielski
• Wydane: Basel MDPI - Multidisciplinary Digital Publishing Institute 2022
• Hasła przedmiotowe: Technology: general issues; retention characteristic; high-κ; nonvolatile charge-trapping memory; stack engineering; NOR flash memory; aluminum oxide; NAND flash memory; interference; Technology Computer Aided Design (TCAD) simulation; disturbance; program; non-volatile memory (NVM); 3D NAND Flash memories; random telegraph noise; Flash memory reliability; test platform; endurance; support vector machine; raw bit error; 3D NAND Flash; RBER; reliability; flash signal processing; randomization scheme; solid-state drives; 3D flash memory; performance cliff; tail latency; garbage collection; artificial neural network; error correction code; work function; effective work function; dipole; metal gate; high-k; SiO2; interfacial reaction; MHONOS; erase performance; 3D NAND flash memory; temperature; read disturb; n/a
• Dostęp online: DOAB: download the publication; DOAB: description of the publication

Flash memory devices have represented a breakthrough in storage since their inception in the mid-1980s, and innovation is still ongoing. The peculiarity of such technology is an inherent flexibility in terms of performance and integration density according to the architecture devised for integration...