Semiconductor Infrared Devices and Applications

• Awduron Eraill: Perera, A. G. Unil (Golygydd)
• Fformat: Electronig Pennod Llyfr
• Iaith: Saesneg
• Cyhoeddwyd: Basel MDPI - Multidisciplinary Digital Publishing Institute 2022
• Pynciau: Technology: general issues; microbolometer; infrared sensor; complementary metal-oxide semiconductor (CMOS); high sensitivity; temperature sensor; microresonator; MEMS; clamped-clamped beam; thermal detector; Infrared detector; strained layer superlattice; InAs/InAsSb; absorption coefficient; barrier detector; high operating temperature; manganite; heterostructure; photodetector; heterostructures; split-off band; wavelength extension; device performance; ultrasound transducer; photoacoustic imaging; piezoelectric; micromachined; CMUT; PMUT; optical ultrasound detection; type-II superlattice; infrared detector; mid-wavelength infrared (MWIR); unipolar barrier; InAs/GaSb; T2SL; IR; TE-cooled; spectroscopy; RoHS; MCT; n/a
• Mynediad Ar-lein: DOAB: download the publication; DOAB: description of the publication

Infrared (IR) technologies-from Herschel's initial experiment in the 1800s to thermal detector development in the 1900s, followed by defense-focused developments using HgCdTe-have now incorporated a myriad of novel materials for a wide variety of applications in numerous high-impact fields. The...