Semiconductor Infrared Devices and Applications

Infrared (IR) technologies-from Herschel's initial experiment in the 1800s to thermal detector development in the 1900s, followed by defense-focused developments using HgCdTe-have now incorporated a myriad of novel materials for a wide variety of applications in numerous high-impact fields. The...

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Other Authors: Perera, A. G. Unil (Editor)
Format: Electronic Book Chapter
Language:English
Published: Basel MDPI - Multidisciplinary Digital Publishing Institute 2022
Subjects:
Online Access:DOAB: download the publication
DOAB: description of the publication
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520 |a Infrared (IR) technologies-from Herschel's initial experiment in the 1800s to thermal detector development in the 1900s, followed by defense-focused developments using HgCdTe-have now incorporated a myriad of novel materials for a wide variety of applications in numerous high-impact fields. These include astronomy applications; composition identifications; toxic gas and explosive detection; medical diagnostics; and industrial, commercial, imaging, and security applications. Various types of semiconductor-based (including quantum well, dot, ring, wire, dot in well, hetero and/or homo junction, Type II super lattice, and Schottky) IR (photon) detectors, based on various materials (type IV, III-V, and II-VI), have been developed to satisfy these needs. Currently, room temperature detectors operating over a wide wavelength range from near IR to terahertz are available in various forms, including focal plane array cameras. Recent advances include performance enhancements by using surface Plasmon and ultrafast, high-sensitivity 2D materials for infrared sensing. Specialized detectors with features such as multiband, selectable wavelength, polarization sensitive, high operating temperature, and high performance (including but not limited to very low dark currents) are also being developed. This Special Issue highlights advances in these various types of infrared detectors based on various material systems. 
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653 |a microbolometer 
653 |a infrared sensor 
653 |a complementary metal-oxide semiconductor (CMOS) 
653 |a high sensitivity 
653 |a temperature sensor 
653 |a microresonator 
653 |a MEMS 
653 |a clamped-clamped beam 
653 |a thermal detector 
653 |a Infrared detector 
653 |a strained layer superlattice 
653 |a InAs/InAsSb 
653 |a absorption coefficient 
653 |a barrier detector 
653 |a high operating temperature 
653 |a manganite 
653 |a heterostructure 
653 |a photodetector 
653 |a heterostructures 
653 |a split-off band 
653 |a wavelength extension 
653 |a device performance 
653 |a ultrasound transducer 
653 |a photoacoustic imaging 
653 |a piezoelectric 
653 |a micromachined 
653 |a CMUT 
653 |a PMUT 
653 |a optical ultrasound detection 
653 |a type-II superlattice 
653 |a infrared detector 
653 |a mid-wavelength infrared (MWIR) 
653 |a unipolar barrier 
653 |a InAs/GaSb 
653 |a T2SL 
653 |a IR 
653 |a TE-cooled 
653 |a spectroscopy 
653 |a RoHS 
653 |a MCT 
653 |a n/a 
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