Miniaturized Transistors, Volume II

• Другие авторы: Filipovic, Lado (Редактор), Grasser, Tibor (Редактор)
• Формат: Электронный ресурс Глава книги
• Язык: английский
• Опубликовано: Basel MDPI - Multidisciplinary Digital Publishing Institute 2022
• Предметы: Research & information: general; Mathematics & science; FinFETs; CMOS; device processing; integrated circuits; silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs); solid state circuit breaker (SSCB); prototype; circuit design; GaN; HEMT; high gate; multi-recessed buffer; power density; power-added efficiency; 4H-SiC; MESFET; IMRD structure; power added efficiency; 1200 V SiC MOSFET; body diode; surge reliability; silvaco simulation; floating gate transistor; control gate; CMOS device; active noise control; vacuum channel; mean free path; vertical air-channel diode; vertical transistor; field emission; particle trajectory model; F-N plot; space-charge-limited currents; 4H-SiC MESFET; simulation; power added efficiency (PAE); new device; three-input transistor; T-channel; compact circuit style; CMOS compatible technology; avalanche photodiode; SPICE model; bandwidth; high responsivity; silicon photodiode; AlGaN/GaN HEMTs; thermal simulation; transient channel temperature; pulse width; gate structures; band-to-band tunnelling (BTBT); tunnelling field-effect transistor (TFET); germanium-around-source gate-all-around TFET (GAS GAA TFET); average subthreshold swing; direct source-to-drain tunneling; transport effective mass; confinement effective mass; multi-subband ensemble Monte Carlo; non-equilibrium Green's function; DGSOI; FinFET; core-insulator; gate-all-around; field effect transistor; GAA; nanowire; one-transistor dynamic random-access memory (1T-DRAM); polysilicon; grain boundary; electron trapping; flexible transistors; polymers; metal oxides; nanocomposites; dielectrics; active layers; nanotransistor; quantum transport; Landauer-Büttiker formalism; R-matrix method; nanoscale; mosfet; quantum current; surface transfer doping; 2D hole gas (2DHG); diamond; MoO3; V2O5; MOSFET; reliability; random telegraph noise; oxide defects; SiO2; split-gate trench power MOSFET; multiple epitaxial layers; specific on-resistance; device reliability; nanoscale transistor; bias temperature instabilities (BTI); defects; single-defect spectroscopy; non-radiative multiphonon (NMP) model; time-dependent defect spectroscopy; n/a
• Online-ссылка: DOAB: download the publication; DOAB: description of the publication

In this book, we aim to address the ever-advancing progress in microelectronic device scaling. Complementary Metal-Oxide-Semiconductor (CMOS) devices continue to endure miniaturization, irrespective of the seeming physical limitations, helped by advancing fabrication techniques. We observe that mini...