Radiation Tolerant Electronics, Volume II

• Outros Autores: Leroux, Paul (Editor)
• Formato: Recurso Eletrônico Capítulo de Livro
• Idioma: inglês
• Publicado em: Basel MDPI - Multidisciplinary Digital Publishing Institute 2023
• Assuntos: Technology: general issues; History of engineering & technology; Energy industries & utilities; triple modular redundancy; 65 nm CMOS technology; single event effects; radiation hardening by design; digital integrated circuits; fault injection; simulation; VHDL; open source tools; triple modular redundancy TMR; time redundancy (TR); TMR/Simplex; reliability improvement factor (RIF); half-duty limited DC-DC converter; total ionizing dose; system-level testing; point-of-load converter; radiation hardness assurance; system qualification; All-Digital; PLL; CDR; Single-Event Effects; radiation hardening; system-level tests; D Flip-Flop; heavy ion; radiation hardened; Single Event Upset; D-type flip-flop; single event transient; single event upset; quadrature; super-harmonic; LC-tank; Q-phase; VCO; QVCO; radiation; TID; SEE; X-ray; high energy physics; radiation hardened by design; 22-nm FD SOI; 28-nm FD SOI; Co-60; flip-flop (FF); radiation effects; ring oscillator (RO); static random-access memory (SRAM); total ionizing dose (TID); radiation effect; radiation test method; sensitive area; parasitic bipolar amplification; processor; laser test; generalized linear model; ensemble method; confidence interval; double-node upset (DNU); radiation-hardened latch; radiation hardening by design (RHBD); single event upset polarity; single-node upset (SNU); soft error; n/a
• Acesso em linha: DOAB: download the publication; DOAB: description of the publication

Research on radiation tolerant electronics has increased rapidly over the last few years, resulting in many interesting approaches to model radiation effects and design radiation hardened integrated circuits and embedded systems. This research is strongly driven by the growing need for radiation har...