Silicon Nanodevices

• Autres auteurs: Radamson, Henry (Éditeur intellectuel), Wang, Guilei (Éditeur intellectuel)
• Format: Électronique Chapitre de livre
• Langue: anglais
• Publié: Basel MDPI - Multidisciplinary Digital Publishing Institute 2022
• Sujets: Technology: general issues; silicon; yolk−shell structure; anode; lithium-ion batteries; in-plane nanowire; site-controlled; epitaxial growth; germanium; nanowire-based quantum devices; HfO2/Si0.7Ge0.3 gate stack; ozone oxidation; Si-cap; interface state density; passivation; GOI; photodetectors; dark current; responsivity; prussian blue nanoparticles; organotrialkoxysilane; silica beads; arsenite; arsenate; water decontamination; vertical gate-all-around (vGAA); digital etch; quasi-atomic-layer etching (q-ALE); selective wet etching; HNO3 concentration; doping effect; vertical Gate-all-around (vGAA); p+-Ge0.8Si0.2/Ge stack; dual-selective wet etching; atomic layer etching (ALE); stacked SiGe/Si; epitaxial grown; Fin etching; FinFET; short-term potentiation (STP); long-term potentiation (LTP); charge-trap synaptic transistor; band-to-band tunneling; pattern recognition; neural network; neuromorphic system; Si-MOS; quantum dot; spin qubits; quantum computing; GeSn; CVD; lasers; detectors; transistors; III-V on Si; heteroepitaxy; threading dislocation densities (TDDs); anti-phase boundaries (APBs); selective epitaxial growth (SEG); n/a
• Accès en ligne: DOAB: download the publication; DOAB: description of the publication

This book is a collection of scientific articles which brings research in Si nanodevices, device processing, and materials. The content is oriented to optoelectronics with a core in electronics and photonics. The issue of current technology developments in the nanodevices towards 3D integration and...