Calculations of Energy Band Structure of GaAs, GaSb and GaP Crystals as a Function of Temperature Using the Semiempirical Tight Binding Method

• Main Authors: Ismail Yahya (Author), Mumtaz Hussien (Author)
• Formato: Livro
• Publicado em: College of Education for Pure Sciences, 2021-09-01T00:00:00Z.
• Assuntos: article
• Acesso em linha: Connect to this object online.

Abstract<br /> In this paper, the band structure of gallium group of III-V semiconductor has been calculated with temperature, the semi-empirical tight binding method was used to calculate the band structure and the matrix elements were calculated for both models sp^3 and sp^3 s^*. A computer...