Calculations of Energy Band Structure of GaAs, GaSb and GaP Crystals as a Function of Temperature Using the Semiempirical Tight Binding Method
Abstract<br /> In this paper, the band structure of gallium group of III-V semiconductor has been calculated with temperature, the semi-empirical tight binding method was used to calculate the band structure and the matrix elements were calculated for both models sp^3 and sp^3 s^*. A computer...
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| Aineistotyyppi: | Kirja |
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College of Education for Pure Sciences,
2021-09-01T00:00:00Z.
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