Calculations of Energy Band Structure of GaAs, GaSb and GaP Crystals as a Function of Temperature Using the Semiempirical Tight Binding Method

• Autori principali: Ismail Yahya (Autore), Mumtaz Hussien (Autore)
• Natura: Libro
• Pubblicazione: College of Education for Pure Sciences, 2021-09-01T00:00:00Z.
• Soggetti: article
• Accesso online: Connect to this object online.

Abstract<br /> In this paper, the band structure of gallium group of III-V semiconductor has been calculated with temperature, the semi-empirical tight binding method was used to calculate the band structure and the matrix elements were calculated for both models sp^3 and sp^3 s^*. A computer...