Effect of Deposition Temperature on the Physical Performance of n-ZnO/p-Si Heterojunction
Comparative study of the physical characteristics of n-ZnO/p-Si heterojunction diode has been done as a function of deposition temperature in the range of 300-600 °C. Transparent conducting (TC) Zinc Oxide (ZnO) thin films were deposited by atmospheric pressure chemical vapor deposition (APCVD) tech...
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| Formato: | Libro |
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College of Education for Pure Sciences,
2020-06-01T00:00:00Z.
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| Acceso en línea: | Connect to this object online. |
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| Número de Clasificación: |
A1234.567 |
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| Copia 1 | Disponible |