Calculate the energy levels of vanadium V2+-grafted semiconductor GaAs using the theoretical orthogonal compliant model

• 主要な著者: Adnan Al-Shekh (著者), Ibtisam Abdullah (著者)
• フォーマット: 図書
• 出版事項: College of Education for Pure Sciences, 2006-01-01T00:00:00Z.
• 主題: article
• オンライン･アクセス: Connect to this object online.

To evaluate the energy level for Vanadium ion in GaAs: V2+ the ground term has determined (4F). Using the concepts of isomorphism on orbital states for the ground term of GaAs: V2+ where the states are described by fictitious orbits of L'=0, T=1/2 & L'=1, the matrix elements for spin H...