Effect of anodic oxidation voltage and superconductivity on the electrical properties of the metal / p-Si / SiO2 device
Abstract<br /> A device of metal-oxide -semiconductor (MOS) structure fabricated from p-Si of )100( direction by tow electrodes anodic oxidation system using HCl aqueous solution at oxidation voltage 0.5,1.0,1.5,2.0) Volt. From C-V measurements the results of the samples show clear and differe...
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| Formato: | Libro |
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College of Education for Pure Sciences,
2010-12-01T00:00:00Z.
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| Acceso en liña: | Connect to this object online. |
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| Número de Clasificación: |
A1234.567 |
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