العيوب في الأفلام الرقيقة من النوع ZnO المنماة بطريقة الترسيب الذري الطبقي
In the present paper, we discuss the influence of point defects on electrical and optical characteristics of ZnO thin films grown by the atomic layer deposition (ALD) method on glass and silicon substrates at low temperature (100°C). Room temperature photoluminescence (RT PL) spectra, secondary ion...
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| Format: | Book |
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Tishreen University,
2016-08-01T00:00:00Z.
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Connect to this object online.3rd Floor Main Library
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A1234.567 |
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| Copy 1 | Available |