Study of the electrical characteristics for Schottky barrier devices Au/n+-GaAs at range of different temperatures pre and post radiation with gamma ray .
Abstract<br /> The electrical characteristics for Schottky barrier devices Au/n+-GaAs which have been radiated with two different doses of -ray at (3.41, 5.26)107 rad with -radiation and unradiated at range of different temperatures (93-333 K) are compared. It was found that the effect of t...
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| Format: | Book |
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College of Education for Pure Sciences,
2013-08-01T00:00:00Z.
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| Call Number: |
A1234.567 |
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