Gas sensitive al membarane on n-type gan schottky diode / A. Y Hudeish, A. Abdul Aziz and Z. Hassan
In this work, we have studied and fabricated a new, simple and small-size N2 and H2 sensitive Aluminum (AI) membrane/semiconductor (Al/n-GaN) Schottky diode sensor. Experimental results revealed that, during the hydride or nitride formation process, the time response increased and enhanced with temp...
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| Main Authors: | , , |
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| Format: | Book |
| Published: |
2004.
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| Subjects: | |
| Online Access: | Link Metadata |
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Internet
Link Metadata3rd Floor Main Library
| Call Number: |
A1234.567 |
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| Copy 1 | Available |