Gas sensitive al membarane on n-type gan schottky diode / A. Y Hudeish, A. Abdul Aziz and Z. Hassan
In this work, we have studied and fabricated a new, simple and small-size N2 and H2 sensitive Aluminum (AI) membrane/semiconductor (Al/n-GaN) Schottky diode sensor. Experimental results revealed that, during the hydride or nitride formation process, the time response increased and enhanced with temp...
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| Autores principales: | , , |
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| Formato: | Libro |
| Publicado: |
2004.
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| Acceso en línea: | Link Metadata |
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| Número de Clasificación: |
A1234.567 |
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| Copia 1 | Disponible |