Gas sensitive al membarane on n-type gan schottky diode / A. Y Hudeish, A. Abdul Aziz and Z. Hassan
In this work, we have studied and fabricated a new, simple and small-size N2 and H2 sensitive Aluminum (AI) membrane/semiconductor (Al/n-GaN) Schottky diode sensor. Experimental results revealed that, during the hydride or nitride formation process, the time response increased and enhanced with temp...
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Formatua: | Liburua |
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2004.
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