Gas sensitive al membarane on n-type gan schottky diode / A. Y Hudeish, A. Abdul Aziz and Z. Hassan

• Egile Nagusiak: Hudeish, A. Y. (Egilea), Abdul Aziz, A. (Egilea), Hassan, Z. (Egilea)
• Formatua: Liburua
• Argitaratua: 2004.
• Gaiak: Conference or Workshop Item; PeerReviewed
• Sarrera elektronikoa: Link Metadata

In this work, we have studied and fabricated a new, simple and small-size N2 and H2 sensitive Aluminum (AI) membrane/semiconductor (Al/n-GaN) Schottky diode sensor. Experimental results revealed that, during the hydride or nitride formation process, the time response increased and enhanced with temp...