Gas sensitive al membarane on n-type gan schottky diode / A. Y Hudeish, A. Abdul Aziz and Z. Hassan

In this work, we have studied and fabricated a new, simple and small-size N2 and H2 sensitive Aluminum (AI) membrane/semiconductor (Al/n-GaN) Schottky diode sensor. Experimental results revealed that, during the hydride or nitride formation process, the time response increased and enhanced with temp...

Deskribapen osoa

Gorde:
Xehetasun bibliografikoak
Egile Nagusiak: Hudeish, A. Y. (Egilea), Abdul Aziz, A. (Egilea), Hassan, Z. (Egilea)
Formatua: Liburua
Argitaratua: 2004.
Gaiak:
Sarrera elektronikoa:Link Metadata
Etiketak: Etiketa erantsi
Etiketarik gabe, Izan zaitez lehena erregistro honi etiketa jartzen!

Internet

Link Metadata

3rd Floor Main Library

Aleari buruzko argibideak 3rd Floor Main Library
Sailkapena: A1234.567
Alea 1 Eskuragarri