Ohmic contacts properties Pd/Ag metallization scheme on P-type GaN / C. W. Lim ... [et al.]

• Main Authors: Lim, C. W. (Author), Yam, F.K (Author), Tan, C.K (Author), A., Abdul Aziz (Author), Z., Hassan (Author)
• Formato: Livro
• Publicado em: 2004.
• Assuntos: Conference or Workshop Item; PeerReviewed
• Acesso em linha: Link Metadata

In this work, we report on the characteristics of Pd/Ag metallization scheme deposited using thermal evaporation for the formation of ohmic contacts to p-type GaN. The electrical behavior and thermal stability at different annea1ing temperatures (400DC - 800DC) were: investigated. Specific contact r...