Ohmic contacts properties Pd/Ag metallization scheme on P-type GaN / C. W. Lim ... [et al.]

• প্রধান লেখক: Lim, C. W. (লেখক), Yam, F.K (লেখক), Tan, C.K (লেখক), A., Abdul Aziz (লেখক), Z., Hassan (লেখক)
• বিন্যাস: গ্রন্থ
• প্রকাশিত: 2004.
• বিষয়গুলি: Conference or Workshop Item; PeerReviewed
• অনলাইন ব্যবহার করুন: Link Metadata

In this work, we report on the characteristics of Pd/Ag metallization scheme deposited using thermal evaporation for the formation of ohmic contacts to p-type GaN. The electrical behavior and thermal stability at different annea1ing temperatures (400DC - 800DC) were: investigated. Specific contact r...