Performance of high-k dielectric material for short channel length MOSFET simulated using silvaco TCAD tools / Fatin Antasha Anizam ... [et al.]
Short channel effect (SCE) occur in the MOSFET devices when the oxide layer became thinner, and the gate length become shorter. The purposed of this study is to find a new dielectric and gate material to replace the conventional oxide which is silicon dioxide (SiO2) and polysilicon as gate material....
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| Główni autorzy: | , , , |
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| Format: | Książka |
| Wydane: |
Universiti Teknologi MARA,
2021-10.
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| Hasła przedmiotowe: | |
| Dostęp online: | Link Metadata |
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