Fabrication and evaluations of PZT thin films by RF reactive sputtering using solid oxygen-source / Sukreen Hana Herman, Kimihiro Sasaki and Tomonobu Hata

PZT films were prepared on Pt/Ti/SiO2/Si substrate by RF reactive sputtering apparatus using metal-oxide composite ZrTi+PbO2 powder and pellet targets. The main sputtering conditions are as follows: sputtering gas is argon and oxygen, gas pressure is 1810-2Torr, 02/Ar flow rate is 0% and 4.2%, subst...

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Main Authors: Herman, Sukreen Hana (Author), Kimihiro, Sasaki (Author), Tomonobu, Hata (Author)
Format: Book
Published: 2004.
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100 1 0 |a Herman, Sukreen Hana  |e author 
700 1 0 |a Kimihiro, Sasaki  |e author 
700 1 0 |a Tomonobu, Hata  |e author 
245 0 0 |a Fabrication and evaluations of PZT thin films by RF reactive sputtering using solid oxygen-source / Sukreen Hana Herman, Kimihiro Sasaki and Tomonobu Hata 
260 |c 2004. 
500 |a https://ir.uitm.edu.my/id/eprint/52734/1/52734.PDF 
520 |a PZT films were prepared on Pt/Ti/SiO2/Si substrate by RF reactive sputtering apparatus using metal-oxide composite ZrTi+PbO2 powder and pellet targets. The main sputtering conditions are as follows: sputtering gas is argon and oxygen, gas pressure is 1810-2Torr, 02/Ar flow rate is 0% and 4.2%, substrate temperature is 200 (unintentionally heated), 450 and 550°C. PbOz target occupation is 300%. It is confirmed that PbOz pellet target has the potential to be the oxygen-source during the deposition with a high deposition rate. Perovskite PZT peak was observed in XRD measurement for film grown with PbO2 pellet target without introducing, my oxygen gas and with a small target occupation during deposition. 
546 |a en 
690 |a Temperature 
690 |a Electric apparatus and materials. Electric circuits. Electric networks 
690 |a Oxygen. Ozone 
655 7 |a Conference or Workshop Item  |2 local 
655 7 |a PeerReviewed  |2 local 
787 0 |n https://ir.uitm.edu.my/id/eprint/52734/ 
856 4 1 |u https://ir.uitm.edu.my/id/eprint/52734/  |z Link Metadata