Statistical optimization influence on high permittivity gate spacer in 16nm DG-FinFET device / Ameer F. Rosla ... [et al.]

• Hoofdauteurs: Rosla, Ameer F. (Auteur), Salehuddin, F. (Auteur), Zain, A.S.M (Auteur), Kaharudin, K.E (Auteur), Mohamad, N.R (Auteur), A.H, Afifah Maheran (Auteur), Haroon, H. (Auteur), Razak, H.A (Auteur), Idris, S.K (Auteur), Ahmad, I. (Auteur)
• Formaat: Boek
• Gepubliceerd in: Universiti Teknologi MARA, 2022-01.
• Onderwerpen: Article; PeerReviewed
• Online toegang: Link Metadata

In this paper, the effect of high permittivity gate spacer on short channel effects (SCEs) for the 16 nm double-gate finFET is investigated, with the output responses optimized using L9 orthogonal array (OA) Taguchi method. The determination is done through Signal-to-noise ratio to the effectiveness...