Statistical optimization influence on high permittivity gate spacer in 16nm DG-FinFET device / Ameer F. Rosla ... [et al.]

Statistical optimization influence on high permittivity gate spacer in 16nm DG-FinFET device / Ameer F. Rosla ... [et al.]

In this paper, the effect of high permittivity gate spacer on short channel effects (SCEs) for the 16 nm double-gate finFET is investigated, with the output responses optimized using L9 orthogonal array (OA) Taguchi method. The determination is done through Signal-to-noise ratio to the effectiveness...

Full description

Saved in:
Bibliographic Details
Main Authors: Rosla, Ameer F. (Author), Salehuddin, F. (Author), Zain, A.S.M (Author), Kaharudin, K.E (Author), Mohamad, N.R (Author), A.H, Afifah Maheran (Author), Haroon, H. (Author), Razak, H.A (Author), Idris, S.K (Author), Ahmad, I. (Author)
Format: Book
Published: Universiti Teknologi MARA, 2022-01.
Subjects:
Article
PeerReviewed
Online Access:Link Metadata
Tags: Add Tag
No Tags, Be the first to tag this record!

Similar Items

Similar Items