Investigation of doping techniques on the silicon based capacitor / Ahmad Sabirin Zoolfakar ...[et al.]
This technical paper investigates the effect of doping techniques, type of dopant species and the plate size on the capacitance density of a silicon based capacitor. The substrate of the silicon wafers are highly doped using either solid source (SS) or spin-on dopant (SOD) method. Experiments are ca...
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| Main Authors: | , , , , |
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| Format: | Book |
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UiTM Press,
2010-06.
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| Online Access: | Link Metadata |
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| Summary: | This technical paper investigates the effect of doping techniques, type of dopant species and the plate size on the capacitance density of a silicon based capacitor. The substrate of the silicon wafers are highly doped using either solid source (SS) or spin-on dopant (SOD) method. Experiments are carried out at three different diffusion temperatures, 900oC, 1000oC and 1050oC. Results show that the diffusion by spin-on dopant gives a higher capacitance density compared to diffusion by solid source while larger plate size leads to a larger capacitance value. In addition, the experiment also shows that n-type wafer heavily doped with phosphorus exhibits a higher capacitance density. |
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| Item Description: | https://ir.uitm.edu.my/id/eprint/61883/1/61883.pdf |