Investigation of doping techniques on the silicon based capacitor / Ahmad Sabirin Zoolfakar ...[et al.]
This technical paper investigates the effect of doping techniques, type of dopant species and the plate size on the capacitance density of a silicon based capacitor. The substrate of the silicon wafers are highly doped using either solid source (SS) or spin-on dopant (SOD) method. Experiments are ca...
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UiTM Press,
2010-06.
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LEADER | 00000 am a22000003u 4500 | ||
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001 | repouitm_61883 | ||
042 | |a dc | ||
100 | 1 | 0 | |a Zoolfakar, Ahmad Sabirin |e author |
700 | 1 | 0 | |a Yaacob, Ahmad Akmalhakim |e author |
700 | 1 | 0 | |a Zolkapli, Maizatul |e author |
700 | 1 | 0 | |a Zakaria, Azlan |e author |
700 | 1 | 0 | |a Abdul Wahab, Mohd Zahrin |e author |
245 | 0 | 0 | |a Investigation of doping techniques on the silicon based capacitor / Ahmad Sabirin Zoolfakar ...[et al.] |
260 | |b UiTM Press, |c 2010-06. | ||
500 | |a https://ir.uitm.edu.my/id/eprint/61883/1/61883.pdf | ||
520 | |a This technical paper investigates the effect of doping techniques, type of dopant species and the plate size on the capacitance density of a silicon based capacitor. The substrate of the silicon wafers are highly doped using either solid source (SS) or spin-on dopant (SOD) method. Experiments are carried out at three different diffusion temperatures, 900oC, 1000oC and 1050oC. Results show that the diffusion by spin-on dopant gives a higher capacitance density compared to diffusion by solid source while larger plate size leads to a larger capacitance value. In addition, the experiment also shows that n-type wafer heavily doped with phosphorus exhibits a higher capacitance density. | ||
546 | |a en | ||
690 | |a TK Electrical engineering. Electronics. Nuclear engineering | ||
655 | 7 | |a Article |2 local | |
655 | 7 | |a PeerReviewed |2 local | |
787 | 0 | |n https://ir.uitm.edu.my/id/eprint/61883/ | |
787 | 0 | |n https://jeesr.uitm.edu.my/v1/ | |
856 | 4 | 1 | |u https://ir.uitm.edu.my/id/eprint/61883/ |z Link Metadata |