The effect of gate geometric effect and polysilicon doping on the performance of scaled NMOS / Muhammad Luqman Nurhakim Kamarudin... [et al.]

• Main Authors: Kamarudin, Muhammad Luqman Nurhakim (Author), Abd Rahim, Alhan Farhanah (Author), Mohd Razali, Nurul Syuhadah (Author), Radzali, Rosfariza (Author), Mahmood, Ainorkhilah (Author), Hamzah, Irni Hamiza (Author), Idris, Mohaiyedin (Author), Mohamed, Mohamed Fauzi Packeer (Author)
• Format: Book
• Published: Universiti Teknologi MARA Cawangan Pulau Pinang, 2023-03.
• Subjects: Article; PeerReviewed
• Online Access: Link Metadata

Insufficiently high doping in polysilicon gates of metal oxide semiconductor field effect transistor (MOSFET) becomes unavoidable due to the demands for low-energy ion implantation and limited annealing conditions to achieve ultra-shallow source and drain junctions. This results in the poly-depletio...