The effect of gate geometric effect and polysilicon doping on the performance of scaled NMOS / Muhammad Luqman Nurhakim Kamarudin... [et al.]
Insufficiently high doping in polysilicon gates of metal oxide semiconductor field effect transistor (MOSFET) becomes unavoidable due to the demands for low-energy ion implantation and limited annealing conditions to achieve ultra-shallow source and drain junctions. This results in the poly-depletio...
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| Main Authors: | , , , , , , , |
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| Format: | Book |
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Universiti Teknologi MARA Cawangan Pulau Pinang,
2023-03.
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| Online Access: | Link Metadata |
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