The effect of gate geometric effect and polysilicon doping on the performance of scaled NMOS / Muhammad Luqman Nurhakim Kamarudin... [et al.]

• Автори: Kamarudin, Muhammad Luqman Nurhakim (Автор), Abd Rahim, Alhan Farhanah (Автор), Mohd Razali, Nurul Syuhadah (Автор), Radzali, Rosfariza (Автор), Mahmood, Ainorkhilah (Автор), Hamzah, Irni Hamiza (Автор), Idris, Mohaiyedin (Автор), Mohamed, Mohamed Fauzi Packeer (Автор)
• Формат: Книга
• Опубліковано: Universiti Teknologi MARA Cawangan Pulau Pinang, 2023-03.
• Предмети: Article; PeerReviewed
• Онлайн доступ: Link Metadata

Insufficiently high doping in polysilicon gates of metal oxide semiconductor field effect transistor (MOSFET) becomes unavoidable due to the demands for low-energy ion implantation and limited annealing conditions to achieve ultra-shallow source and drain junctions. This results in the poly-depletio...