Measurement of the doped ion depth of junction semiconductor prepared by ion implementation using ESCA technique
Abstract<br /> Measurement the depth of ion implantation is considered to be one of the important subject in physics , which has been employed by using SIMS and RBS methods. In this research Electron spectroscopy of chemical Analysis (ESCA) technique has been used to determine the depth of ind...
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| Main Authors: | , |
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| Format: | Book |
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College of Education for Pure Sciences,
2008-06-01T00:00:00Z.
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Internet
Connect to this object online.3rd Floor Main Library
| Call Number: |
A1234.567 |
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| Copy 1 | Available |