Measurement of the doped ion depth of junction semiconductor prepared by ion implementation using ESCA technique

• मुख्य लेखकों: Slah Sheet (लेखक), Hazim Mahmoud (लेखक)
• स्वरूप: पुस्तक
• प्रकाशित: College of Education for Pure Sciences, 2008-06-01T00:00:00Z.
• विषय: article
• ऑनलाइन पहुंच: Connect to this object online.

Abstract<br /> Measurement the depth of ion implantation is considered to be one of the important subject in physics , which has been employed by using SIMS and RBS methods. In this research Electron spectroscopy of chemical Analysis (ESCA) technique has been used to determine the depth of ind...